Story
Navitas Semiconductor Stock Soars on U.S. Army Contract for High-Voltage Chips
Summary
Shares of the semiconductor firm jumped 20% in after-hours trading after it was selected by the U.S. Army to develop next-generation silicon carbide power semiconductors for defense applications.
Navitas Semiconductor (NASDAQ:NVTS) shares surged 20% in after-hours trading Monday after the company announced it was selected by the U.S. Government to develop next-generation power semiconductors.
The Defense Contract
The U.S. Army awarded Navitas the ALATTIS (Accelerated, Large-Area, 10 kV SiC IGBT) program following a competitive evaluation. The project aims to create a domestic manufacturing process for ultra-high-voltage 10 kV silicon carbide (SiC) power devices, including insulated-gate bipolar transistors (IGBTs) and PiN diodes.
Sponsored by the Army Research Laboratory, the initiative is designed to advance high-power electronics for mission-critical systems used by the Armed Forces. According to the announcement, Navitas was chosen from among leading U.S. silicon carbide technology companies due to its innovation in the field and its U.S.-anchored manufacturing capabilities.
AdContext and Company Expertise
This contract marks a significant endorsement of Navitas' technology. The company's GeneSiC power semiconductor portfolio currently includes products with voltage ratings from 650 V to 6.5 kV. The new program pushes its development into the much higher 10 kV range.
Siddarth Sundaresan, SVP and Chief Technology Officer at Navitas, said the award "marks a significant milestone in advancing ultra-high-voltage silicon carbide (SiC) power devices." He noted it recognizes the company's more than two decades of innovation in high-power SiC technologies.
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